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Structural engineering of ferromagnetism in III-V digital ferromagnetic heterostructures

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Structural engineering of ferromagnetism in III-V digital ferromagnetic heterostructures

Auteurs : RBID : Pascal:04-0182161

Descripteurs français

Pascal (Inist)
- 7550P, 7550D, 7530K, 7560E, 7570A, Etude expérimentale, Hétérojonction semiconducteur, Gallium arséniure, Couche épitaxique magnétique, Indium composé, Semiconducteur III-V, Semiconducteur magnétique, Matériau ferromagnétique, Contrainte interne, Densité porteur charge, Point Curie, Hystérésis magnétique, Diffraction RX.

English descriptors

KwdEn :
- Carrier density, Curie point, Experimental study, Ferromagnetic materials, Gallium arsenides, III-V semiconductors, Indium compounds, Internal stresses, Magnetic epitaxial layers, Magnetic hysteresis, Magnetic semiconductors, Semiconductor heterojunctions, XRD.

Abstract

We investigate the possibility of modulating the magnetic properties of (Ga,Mn)As digital ferromagnetic heterostructures (DFHs) via strain engineering. We p-dope DFHs below the compensation threshold of residual As antisites to achieve variations in strain without introducing free carriers and with relatively modest concentrations of impurity atoms. X-ray diffraction and superconducting quantum interference device measurements reveal a trend toward higher T_C as the out-of-plane strain is increased. Additionally, we demonstrate a second method for strain engineering wherein DFHs are grown on anisotropically relaxed (Ga,In)As stressor layers. We show that the ferromagnetic properties are independent of strain in this regime and conclude that the structure-dependent modulation of magnetic properties in DFHs cannot be explained by simple strain effects alone. © 2004 American Institute of Physics.

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<front><div type="abstract" xml:lang="en">We investigate the possibility of modulating the magnetic properties of (Ga,Mn)As digital ferromagnetic heterostructures (DFHs) via strain engineering. We p-dope DFHs below the compensation threshold of residual As antisites to achieve variations in strain without introducing free carriers and with relatively modest concentrations of impurity atoms. X-ray diffraction and superconducting quantum interference device measurements reveal a trend toward higher T<sub>C</sub>
 as the out-of-plane strain is increased. Additionally, we demonstrate a second method for strain engineering wherein DFHs are grown on anisotropically relaxed (Ga,In)As stressor layers. We show that the ferromagnetic properties are independent of strain in this regime and conclude that the structure-dependent modulation of magnetic properties in DFHs cannot be explained by simple strain effects alone. © 2004 American Institute of Physics.</div>
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 as the out-of-plane strain is increased. Additionally, we demonstrate a second method for strain engineering wherein DFHs are grown on anisotropically relaxed (Ga,In)As stressor layers. We show that the ferromagnetic properties are independent of strain in this regime and conclude that the structure-dependent modulation of magnetic properties in DFHs cannot be explained by simple strain effects alone. © 2004 American Institute of Physics.</s0>
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Structural engineering of ferromagnetism in III-V digital ferromagnetic heterostructures

Structural engineering of ferromagnetism in III-V digital ferromagnetic heterostructures

Descripteurs français

English descriptors

Abstract

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